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Specifications:

• FET Type: MOSFET N-Channel, Metal Oxide
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25° C: 5.9A
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Gate Charge (Qg) @ Vgs: 5.8nC @ 4.5V
• Input Capacitance (Ciss) @ Vds: 410pF @ 20V
• Power - Max: 2W
• Mounting Type: SMD
• Package: SOT-23-3

Documents:

• Datasheet